Improvement in efficiency and luminous power of AlGaN-based D-UV LEDs by using partially graded quantum barriers-Reference-Cited by-同舟云学术

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Improvement in efficiency and luminous power of AlGaN-based D-UV LEDs by using partially graded quantum barriers

Published:2020-06 Issue: Volume:142 Page:106543
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Gupta Himanshu,Ahmad Shameem,Kattayat Sandhya,Kumar Dheeraj,Dalela Saurabh,Siddiqui M.J.,Alvi P.A.

Funder

DST

Govt. Of India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. “III–Nitride UV devices”;Khan;Jpn. J. Appl. Phys.,2005

2. Deep-Ultraviolet light-emitting diodes;Shur;IEEE Trans. Electron. Dev.,2010

3. Modeling and simulation of GaN based QW LED for UV emission;Ahmad;Int. J. Light Electr. Opt.: Optik,2018

4. Performance enhancement of UV quantum well light emitting diode through structure optimization;Ahmad;Opt. Quant. Electron.,2019

5. Enhanced optical gain characteristics of InAlN/δ-GaN/InAlN nanoscale-heterostructure for D-UV applications”;Alvi;Superlattice. Microst.,2020

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode;Journal of Electronic Materials;2024-06-05

2. Performance of Improvement of AlGaN‐Based Deep UV Light‐Emitting Diode with Two Parts Linearly Graded Barriers;physica status solidi (a);2023-07-02

3. Research Progress and Development Prospects of Enhanced GaN HEMTs;Crystals;2023-06-04

4. Designing p-region of AlGaN ultraviolet light-emitting diodes for the improved performance;Physica B: Condensed Matter;2023-06

5. Tailoring the performance of GaN-based yellow light-emitting diodes;Physica B: Condensed Matter;2023-02

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