Affiliation:
1. School of Opto-electronic and Communication Engineering Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices Xiamen University of Technology Xiamen 361024 China
2. School of Electronic and Information Engineering Beihang University Beiijng 100083 China
3. Xiamen AnMaiXin Automation Technology Co., Ltd Xiamen 361024 China
Abstract
Herein, a novel AlGaN‐based multiple quantum well (MQW) deep UV light‐emitting diode (DUV‐LED) structure with two parts linearly graded barriers is presented. The simulation result shows that at a current of 50 mA, the light output power of the DUV‐LED with two parts linearly graded barrier MQWs has significant improvement as compared to stationary barriers. The electroluminescence spectrum and radiative recombination rate of novel DUV‐LEDs are also larger more than twice that of the conventional QW structure. The reason is that the injection efficiency of holes is increased which helps improve the hole and electron concentration in the active area. Meanwhile, the electric field is also decreased by using two parts linearly graded quantum barriers, and according to reduce the electric field the quantum‐confined Stark effect and the bend of the energy band get relieved.
Funder
Natural Science Foundation of Fujian Province
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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