Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1432112
Reference8 articles.
1. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
2. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
3. H. Hirayama, A. Kinoshita, A. Hirata, and Y. Aoyagi, GaN and Related Alloys [Mater. Res. Soc. Symp. Proc. MRSPDH639 G2.8 (2001)].MRSPDH0272-9172
4. 230 to 250 nm Intense Emission from AlN/AlGaN Quantum Wells
5. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
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