Relaxed GaP on Si with low threading dislocation density-Reference-Cited by-同舟云学术

Relaxed GaP on Si with low threading dislocation density

Author:

Hool Ryan D.¹²^ORCID,Chai Yuji³,Sun Yukun²³⁴,Eng Brendan C.²³,Dhingra Pankul²³,Fan Shizhao²³,Nay Yaung Kevin⁴,Lee Minjoo Larry²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

2. Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

3. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

4. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA

Funder

National Science Foundation

National Aeronautics and Space Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference18 articles.

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