Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3310479
Reference34 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
2. Control of structural defects in group III V N alloys grown on Si
3. Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes;Samonji K.,1998
4. Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate
5. Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
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