Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1388026
Reference13 articles.
1. Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures
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3. Making silicon nitride film a viable gate dielectric
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5. Atomic layer controlled deposition of silicon nitride with self‐limiting mechanism
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