Polysilicon contact structures for silicon solar cells using atomic layer deposited oxides and nitrides as ultra‐thin dielectric interlayers-Reference-Cited by-同舟云学术

Polysilicon contact structures for silicon solar cells using atomic layer deposited oxides and nitrides as ultra‐thin dielectric interlayers

Published:2021-11-08 Issue:3 Volume:30 Page:288-299
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Progress in Photovoltaics

Author:

Reichel Christian¹,Feldmann Frank¹²^ORCID,Richter Armin¹^ORCID,Benick Jan¹,Hermle Martin¹,Glunz Stefan W.¹³

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems (ISE) Freiburg Germany

2. now with Solarlab Aiko Europe GmbH Freiburg Germany

3. Department of Sustainable Systems Engineering (INATECH) University of Freiburg Freiburg Germany

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3485

Reference86 articles.

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3. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

4. Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

5. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells

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