2D hexagonal photonic crystal GeSn laser with 16% Sn content
Author:
Affiliation:
1. University Grenoble Alpes, CEA, INAC-Pheliqs, 38000 Grenoble, France
2. University Grenoble Alpes, CEA, Leti, 38000 Grenoble, France
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5036739
Reference32 articles.
1. Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy
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4. Ge-on-Si laser operating at room temperature
5. Optical gain in single tensile-strained germanium photonic wire
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