Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering-Reference-Cited by-同舟云学术

Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering

Published:2022-08-21 Issue:22 Volume:10 Page:2201024
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Buca Dan¹,Bjelajac Andjelika²,Spirito Davide³,Concepción Omar¹,Gromovyi Maksym²,Sakat Emilie²,Lafosse Xavier²,Ferlazzo Laurence²,von den Driesch Nils¹,Ikonic Zoran⁴,Grützmacher Detlev¹,Capellini Giovanni³⁵,El Kurdi Moustafa²^ORCID

Affiliation:

1. Institute of Semiconductor Nanoelectronics Peter Grünberg Institute 9 (PGI 9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany

2. CNRS C2N Université Paris‐Saclay 10 boulevard Thomas Gobert Palaiseau 91120 France

3. IHP ‐ Leibniz‐Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

4. Pollard Institute School of Electronic and Electrical Engineering University of Leeds Leeds LS2 9JT UK

5. Dipartimento di Scienze Università Roma Tre V.le G. Marconi 446 Rome I‐00146 Italy

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202201024

Reference32 articles.

1. Group IV Photonics: Driving Integrated Optoelectronics

2. Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

3. Lasing in direct-bandgap GeSn alloy grown on Si

4. Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

5. GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

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