Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates-Reference-Cited by-同舟云学术

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Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates

Published:2015-11-23 Issue:21 Volume:107 Page:212105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bogumilowicz Y.¹,Hartmann J. M.¹,Cipro R.²,Alcotte R.²,Martin M.²,Bassani F.²,Moeyaert J.²,Baron T.²,Pin J. B.³,Bao X.³,Ye Z.³,Sanchez E.³

Affiliation:

1. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, Minatec Campus, F-38054 Grenoble, France

2. Univ. Grenoble Alpes, F-38000 Grenoble, France and CNRS, LTM, F-38054 Grenoble, France

3. AMAT, 3050 Bowers Avenue, Santa Clara, California 95054, USA

Funder

LabEx Minos

Recherche Technologique de Base

RENATECH

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935943

Reference20 articles.

1. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

2. Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge∕Si substrates

3. Gallium arsenide and other compound semiconductors on silicon

4. Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

5. GaAs epitaxy on Si substrates: modern status of research and engineering

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1. Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates;Light: Science & Applications;2022-06-01

2. Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al)GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si(100) Substrates;Technical Physics Letters;2021-12-14

3. GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications;Post-Transition Metals;2021-04-14

4. Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD;Journal of Materials Science: Materials in Electronics;2021-02-06

5. Lasing in Group-IV Materials;Topics in Applied Physics;2021

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