Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge∕Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2729477
Reference27 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates
3. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates
4. High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates
5. SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications
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1. Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate;Journal of Crystal Growth;2023-12
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3. Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si;ST PETER POLY U J-PH;2022
4. High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters;Optica;2021-05-17
5. Thin Film GaAs Photodetector Integrated on Silicon using Ultra-Thin Ge Buffer Layer for Visible Photonics Applications;Frontiers in Optics / Laser Science;2020
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