Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials-Reference-Cited by-同舟云学术

Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Published:2023 Issue:7 Volume:11 Page:2430-2448
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

An Shu¹,Park HyunJung¹,Kim Munho¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore

Abstract

Flexible optoelectronics have attracted much attention in recent years for their potential applications in healthcare and wearable devices.

Funder

Agency for Science, Technology and Research

Ministry of Education - Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC05041B

Reference197 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. GeSn p-i-n photodetector for all telecommunication bands detection

3. Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

4. Advances in InGaAs/InP single-photon detector systems for quantum communication

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