The method of growing InGaAs nanowires in a dual-temperature zone tube furnace

Abstract

Abstract In this paper, InAs, GaAs, and InGaAs nanowires are grown by CVD using a dual-temperature zone tube furnace. The grown nanowires are characterized and analyzed. Based on the traditional chemical vapor deposition method, a small quartz tube is innovatively used to first deliver group III materials to fuse with gold particles, thus forming a higher quality eutectic alloy. It then pushes in InAs and GaAs source materials for normal growth. With growing InGaAs nanowires, the source temperature of InGaAs nanowire growth is controlled by using a dual-temperature zone to achieve the control of InGaAs nanowire components.