Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric
Author:
Affiliation:
1. Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791, USA
2. Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
Funder
Division of Materials Research
Directorate for Engineering
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5020443
Reference23 articles.
1. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
2. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
3. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
4. Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy
5. Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
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