Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy

Author:

Chen Ming-Wei12,Ovchinnikov Dmitry12,Lazar Sorin3,Pizzochero Michele4,Whitwick Michael Brian1,Surrente Alessandro5,Baranowski Michał56,Sanchez Oriol Lopez12,Gillet Philippe4,Plochocka Paulina5ORCID,Yazyev Oleg V.4,Kis Andras12ORCID

Affiliation:

1. Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

2. Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

3. FEI Electron Optics, 5600 KA Eindhoven, The Netherlands

4. Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

5. Laboratoire National des Champs Magnétiques Intenses CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France

6. Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław, Poland

Funder

FP7 Information and Communication Technologies

Agence Nationale de la Recherche

FP7 People: Marie-Curie Actions

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

FP7 Ideas: European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

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