Rapid Growth of Monolayer MoSe 2 Films for Large‐Area Electronics-Reference-Cited by-同舟云学术

Rapid Growth of Monolayer MoSe 2 Films for Large‐Area Electronics

Published:2021-05-13 Issue:6 Volume:7 Page:2001219
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Danzhen¹²,Wen Chengyu¹³,Mcclimon John Brandon⁴,Masih Das Paul¹,Zhang Qicheng¹,Leone Grace A.⁵,Mandyam Srinivas V.¹,Drndić Marija¹,Johnson Alan T. Charlie¹,Zhao Meng‐Qiang¹^ORCID

Affiliation:

1. Department of Physics and Astronomy University of Pennsylvania Philadelphia PA 19104 USA

2. State Key Lab of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China

3. Department of Electrical and System Engineering University of Pennsylvania 209 South 33rd Street Philadelphia PA 19104 USA

4. Department of Mechanical Engineering & Applied Mechanics University of Pennsylvania Philadelphia PA 19104 USA

5. Department of Chemistry University of Pittsburgh Pittsburgh PA 15260 USA

Funder

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001219

Reference58 articles.

1. Large area few-layer TMD film growths and their applications

2. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

3. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

4. Multiflake Thin Film Electronic Devices of Solution Processed 2D MoS2 Enabled by Sonopolymer Assisted Exfoliation and Surface Modification

5. Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition

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