Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4926786
Reference32 articles.
1. Quantum cascade lasers emitting near 2.6 μm
2. High temperature operation of short wavelength InAs-based quantum cascade lasers
3. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
4. Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
5. Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM
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