Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202752
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Band offsets of wide-band-gap oxides and implications for future electronic devices
3. Defect energy levels in HfO2 high-dielectric-constant gate oxide
4. Negative-U property of oxygen vacancy in cubic HfO2
5. Stability and band offsets of nitrogenated high-dielectric-constant gate oxides
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