Negative-U property of oxygen vacancy in cubic HfO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2009826
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. International Reliability Physics Symposium Proceedings;Kerber A.,2003
3. Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs
4. Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures
5. Iterative minimization techniques forab initiototal-energy calculations: molecular dynamics and conjugate gradients
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