Exploring the direction-dependency of conductive filament formation and oxygen vacancy migration behaviors in HfO2-based RRAM
Author:
Affiliation:
1. Powder Metallurgy Research Institute, Central South University, Changsha, Hunan, 410083, China
2. Information and Network Center, Central South University, Changsha, Hunan, 410083, China
Abstract
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province
National Key Research and Development Program of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP05803K
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1. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
2. Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
3. Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
4. Emerging dynamic memristors for neuromorphic reservoir computing
5. Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full‐Adder Functions with Memristor Crossbar for Beyond von Neumann In‐Memory Computing
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Exploring the Effects of Mo Doping on Oxygen Vacancy Formation and Uniformity in HfO2- and ZrO2-Based RRAMs;The Journal of Physical Chemistry C;2023-08-03
2. Modulating the resistive switching stability of HfO2-based RRAM through Gd doping engineering: DFT+U;Physical Chemistry Chemical Physics;2023
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