Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses-Reference-Cited by-同舟云学术

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Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses

Published:2022-10 Issue: Volume:599 Page:153906
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ismail Muhammad,Mahata Chandreswar,Kim Sungjun

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference53 articles.

1. S. Fusi, D.J. Amit, Spike-Driven Synaptic Plasticity: Theory, Simulation, VLSI Implementation, n.d.

2. Resistance switching memories are memristors;Chua;Appl. Phys. A Mater. Sci. Process.,2011

3. Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation;Wu;J. Appl. Phys.,2011

4. Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices;Song;Appl. Phys. Lett.,2019

5. Oxygen vacancy engineering of TaO x-based resistive memories by Zr doping for improved variability and synaptic behavior;Palhares;Nanotechnology.,2021

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