Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices
Author:
Affiliation:
1. Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
Funder
Science and Engineering Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5100075
Reference25 articles.
1. Metal–Oxide RRAM
2. Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications
3. Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor
4. Resistive Memory-Based Analog Synapse: The Pursuit for Linear and Symmetric Weight Update
5. A Ti/AlOx/TaOx/Pt Analog Synapse for Memristive Neural Network
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