Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor-Reference-Cited by-同舟云学术

Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor

Published:2018-07-11 Issue:29 Volume:10 Page:24598-24606
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Ya¹,Chu Jinxing¹,Duan Weijie¹,Cai Guangshuo¹,Fan Xihua¹,Wang Xinzhong²,Wang Gang¹³,Pei Yanli¹²^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China

2. Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen, Guangdong 518172, China

3. Foshan Research Institute of Sun Yat-Sen University, Foshan, Guangdong 528222, China

Funder

the Science and Technology Planning Projects of Guangdong Province, China

the Basic Research Plan Program of Shenzhen City, China

the Science and Technology Planning Project of Guangzhou, China

the National Natural Science Foundations, China

the Natural Science Foundation of Guangdong Province, China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b05749

Reference38 articles.

1. Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

2. Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure

3. Lu, W.; Kim, K.; Chang, T.; Gaba, S. Two-Terminal Resistive Switches (Memristors) for Memory and Logic Applications. ASPDAC 11 Proceedings of the 16th Asia and South Pacific Design Automation Conference, 2011; pp 217–223.

4. Practical Approach to Programmable Analog Circuits With Memristors

5. Direct observation of conducting filaments on resistive switching of NiO thin films

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