Uniformity Improvement of Ti/ZrO<sub>2</sub>/Pt RRAM by Analyzing and Reducing Current Overshoot-Reference-Cited by-同舟云学术

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Uniformity Improvement of Ti/ZrO₂/Pt RRAM by Analyzing and Reducing Current Overshoot

Published:2024-06-12 Issue:6 Volume:6 Page:4764-4771
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yang Dingming¹,Xue Jiahao¹,Wang Jing¹,Wang Hao¹,Wang Shulong²,Lei Xiaoyi¹^ORCID,Yan Junfeng¹^ORCID,Zhao Wu¹

Affiliation:

1. The School of Information Science and Technology, Northwest University, Xi’an 710127, People’s Republic of China

2. Key Laboratory for Wide-Bandgap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00790

Reference36 articles.

1. Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays

2. A review of emerging non-volatile memory (NVM) technologies and applications

3. Graphene and Related Materials for Resistive Random Access Memories

4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

5. Investigating Selectorless Property within Niobium Devices for Storage Applications

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1. Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiO_xN_y/SnO_x Memristor for Neuromorphic Systems;ACS Materials Letters;2024-07-09

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