Bipolar and complementary resistive switching induced by barrier regulation based on compliance current

Author:

Qiu Xuan1ORCID,Gao Haixia1ORCID,Zhu Shilong1ORCID,Bai Yifan1ORCID,Zhao Yang1,Wang Rui1,Ma Xiaohua1,Yang Yintang1ORCID

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University , Xi'an 710071, China

Abstract

This Letter investigates the effect of barrier regulation by changing compliance current (CC) on resistance switching (RS) modes. The device exhibits bipolar resistive switching (BRS) with low CCs (1, 3, 7, and 12 mA) and complementary resistive switching (CRS) without CC. By analyzing the current conduction mechanism, the variation law of Schottky barrier height under different CCs is studied, and the different RS modes are explained by the degree of nitrogen enrichment in the non-inert electrode. This paper further explores the correlation between BRS and CRS. Endurance tests in different modes show that the device is expected to achieve a multi-mode RS design.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

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