Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs-Reference-Cited by-同舟云学术

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Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs

Published:2016-06 Issue:6 Volume:6 Page:065208
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Elborg M.¹,Noda T.²,Mano T.³,Sakuma Y.³

Affiliation:

1. International Center for Young Scientists, National Institute for Materials Science, 305-0047 Tsukuba, Japan

2. Photovoltaic Materials Unit, National Institute for Materials Science, 305-0047 Tsukuba, Japan

3. Photonic Materials Unit, National Institute for Materials Science, 305-0047 Tsukuba, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953894

Reference30 articles.

1. Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells

2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

3. Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance

4. On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

5. Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence;Journal of Vacuum Science & Technology A;2023-07-12

2. Real-space detection and manipulation of two-dimensional quantum well states in few-layer MoS2;Physical Review B;2022-02-08

3. Open-Circuit Voltage in AlGaAs Solar Cells With Embedded GaNAs Quantum Wells of Varying Confinement Depth;IEEE Journal of Photovoltaics;2017-01

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