Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3055605
Reference11 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
3. Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
4. Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds
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