Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.085320/fulltext
Reference22 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Bowing parameter of the band-gap energy of GaNxAs1−x
3. Gas-source MBE of GaInNAs for long-wavelength laser diodes
4. Effect of nitrogen on the band structure of GaInNAs alloys
5. From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
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