Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1488240
Reference19 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law
3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
4. Electronic structure and phase stability ofGaAs1−xNxalloys
5. Quasiparticle excitations inGaAs1−xNxandAlAs1−xNxordered alloys
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