Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors-Reference-Cited by-同舟云学术

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Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Published:2005-03-21 Issue:12 Volume:86 Page:123512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Masahara Meishoku,Liu Yongxun,Ishii Kenichi,Sakamoto Kunihiro,Matsukawa Takashi,Tanoue Hisao,Kanemaru Seigo,Suzuki Eiichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1891289

Reference13 articles.

1. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate

2. Ultrafast operation of V/sub th/-adjusted p/sup +/-n/sup +/ double-gate SOI MOSFET's

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1. Analysis and Simulation of Schottky Tunneling Using Schottky Barrier FET with 2-D Analytical Modeling;Silicon;2021-01-05

2. Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal–oxide–silicon fin field-effect transistors;Japanese Journal of Applied Physics;2015-03-05

3. Design of Double-Gate MOSFET;Analog Circuits and Signal Processing;2013-08-13

4. Vertical double-gate MOSFET device technology;Electronics and Communications in Japan;2008-01

5. Crossover from diffusive to quasi-ballistic transport;Journal of Applied Physics;2007-02

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