Analysis and Simulation of Schottky Tunneling Using Schottky Barrier FET with 2-D Analytical Modeling
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00879-3.pdf
Reference21 articles.
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2. Masahara M, Liu Y, Ishii K, Sakamoto K, Matsukawa T, Tanoue H, Kanemaru S, Suzuki E (2005) Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors. Appl Phys Lett 86:123512. https://doi.org/10.1063/1.1891289
3. Chaudhry A, Kumar MJ (2004) Controlling Short-Channel effects in deep-submicron SOI MOSFETs for improved reliability: a review. IEEE Trans Device Mater Relib 4:99–109. https://doi.org/10.1109/TDMR.2004.824359
4. Kumar P, Bhowmick B (2018) Comparative analysis of hetero gate dielectric hetero structure tunnel FET and Schottky barrier FET with n+ pocket doping for suppression of Ambipolar conduction and improved RF/linearity. J Nanoelectron Optoelectron. https://doi.org/10.1166/jno.2018.2488
5. Larson JM, Snyder JP (2006) Overview and status of metal S/D Schottky-barrier MOSFET technology. IEEE Trans Electron Devices 53:1048–1058. https://doi.org/10.1109/TED.2006.871842
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