Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si-Reference-Cited by-同舟云学术

Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si

Published:2009-09-07 Issue:10 Volume:95 Page:101908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

De Salvador D.,Bisognin G.,Napolitani E.,Mastromatteo M.,Baggio N.,Carnera A.,Boscherini F.,Impellizzeri G.,Mirabella S.,Boninelli S.,Priolo F.,Cristiano F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3216806

Reference20 articles.

1. Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth

2. Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

3. Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si

4. Mechanisms of B deactivation control by F co-implantation

5. Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion

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4. Ion Implantation Defects and Shallow Junctions in Si and Ge;Semiconductors and Semimetals;2015

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