1. International Technology Roadmap for Semiconductors 2003 Edition, Semiconductor Industry Association, San Jose, CA, December 2003.
2. See the proceedings of the 7th International Workshop on the Fabrication of Ultra-Shallow Doping Profiles in Semiconductors (26 April–1 May 2003, Santa Cruz, CA, USA) published in J. Vac. Sci. Technol. B 22 (1) (2004) 288–476.
3. Kinetics of boron reactivation in doped silicon from Hall effect and spreading resistance techniques
4. A. Mokhberi, P.B. Griffin, J.D. Plummer, Proceedings of SISPAD 2000 International Conference, IEEE, 2000, p. 163.