Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1344568
Reference12 articles.
1. Silicon on insulator material technology
2. On the mechanism of the hydrogen-induced exfoliation of silicon
3. Study of the crystalline quality of exfoliated surfaces in hydrogen-implanted silicon
4. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
5. Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
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1. Effects of the surface oxide layer on platelet growth in H2+-implanted Si;Vacuum;2014-04
2. Statistical analysis of blister bursts during temperature-programmed desorption of deuterium-implanted polycrystalline tungsten;Physica Scripta;2011-12-01
3. In situ observation of gas reemission and blister rupture during helium implantation in silicon;Applied Physics Letters;2008-02-04
4. Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments;Physical Review B;2006-11-29
5. An example of chemistry–morphology interaction: making up for the geometric and energetic heterogeneities of the (1 0 0) surface of single crystalline silicon by high-temperature treatments in H2;Applied Surface Science;2005-10
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