Statistical analysis of blister bursts during temperature-programmed desorption of deuterium-implanted polycrystalline tungsten
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/2011/i=T145/a=014038/pdf
Reference12 articles.
1. Blister bursting and deuterium bursting release from tungsten exposed to high fluences of high flux and low energy deuterium plasma
2. Deuterium retention, blistering and local melting at tungsten exposed to high-fluence deuterium plasma
3. Characterization of surface morphology and retention in tungsten materials exposed to high fluxes of deuterium ions in the tritium plasma experiment
4. Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation
5. Influence of the microstructure on the deuterium retention in tungsten
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effect of High-Temperature Pre-Damage on Vacancy-Type defects and deuterium retention in tungsten;Nuclear Materials and Energy;2024-03
2. A critical review of experiments on deuterium retention in displacement-damaged tungsten as function of damaging dose;Materials Research Express;2023-10-01
3. The effect of pre-damage distribution on deuterium-induced blistering and retention in Tungsten;Fusion Engineering and Design;2023-04
4. Deuterium trapping behavior in tungsten surface due to low-energy ion irradiation;Journal of Nuclear Materials;2023-04
5. Surface morphology and deuterium retention in W and W-HfC alloy exposed to high flux D plasma irradiation;Nuclear Engineering and Technology;2023-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3