Effects of the surface oxide layer on platelet growth in H2+-implanted Si
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference25 articles.
1. Application of hydrogen ion beams to Silicon On Insulator material technology
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3. Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation
4. Hydrogen blistering of silicon: Progress in fundamental understanding
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of surface exfoliation on 6H-SiC induced by H2+ implantation;Physica B: Condensed Matter;2017-03
2. Study of surface blistering in GaN by hydrogen implantation at elevated temperatures;Thin Solid Films;2015-09
3. Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology;Journal of Semiconductors;2015-03
4. Effect of implantation temperature on exfoliation of H2+-implanted Si;Vacuum;2014-11
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