Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1353561
Reference31 articles.
1. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
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4. A lower bound on implant density to induce wafer splitting in forming compliant substrate structures
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