Study of the crystalline quality of exfoliated surfaces in hydrogen-implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126946
Reference8 articles.
1. Silicon on insulator material technology
2. Application of hydrogen ion beams to Silicon On Insulator material technology
3. Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
4. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
5. Dechanneling of MeV protons by 60° dislocations
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2. Nanoscale Materials Defect Characterisation;Ion Beams in Nanoscience and Technology;2009
3. Surface blistering of low-temperature annealed hydrogen and helium co-implanted silicon and its application to splitting of bonded wafer substrates;Vacuum;2007-06
4. Exploiting the third dimension in nanofabrication technology with scanned high energy ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
5. Transmission ion channeling analysis of isolated 60° misfit dislocations;Applied Physics Letters;2005-11-21
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