Dendritic crystallization of amorphous germanium byin situthermal pulse annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365385
Reference19 articles.
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3. Manipulation of nucleation sites in solid‐state Si crystallization
4. Optoelectronic properties of polycrystalline silicon produced by low-temperature (600°C) solid-phase crystallization of hydrogenated amorphous silicon
5. Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications
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1. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO 2 /Si substrates;Applied Surface Science;2014-10
2. Self-assembly of colloidal sulfur particles influenced by sodium oxalate salt on glass surface from evaporating drops;Soft Matter;2012
3. Electrical properties of Ge–Au films prepared by magnetron sputtering;Vacuum;2002-02
4. Charge-transport properties of dendritic germanium thin films;Physical Review B;1998-12-15
5. On the feasibility of using ultraviolet/ozone grown oxide as an atomic interdiffusion barrier in Ge/GaAs heterojunctions;Applied Physics Letters;1998-05-25
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