Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low‐pressure chemical vapor deposited amorphous silicon films-Reference-Cited by-同舟云学术

Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low‐pressure chemical vapor deposited amorphous silicon films

Published:1989-05-15 Issue:10 Volume:65 Page:4036-4039
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu I.‐W.,Chiang A.,Fuse M.,Öveçoglu L.,Huang T. Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.343327

Reference8 articles.

1. Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

2. Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT

3. Hydrogenation of transistors fabricated in polycrystalline-silicon films

4. Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO2: Implant angle dependence

5. Low‐temperature grain growth of initially 〈100〉 textured polycrystalline silicon films amorphized by silicon ion implantation with normal incident angle

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