Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

Published:2018-02-26 Issue:9 Volume:112 Page:092906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Taeho¹,Park Jinsung²,Cheong Byoung-Ho¹^ORCID,Jeon Sanghun³^ORCID

Affiliation:

1. Department of Applied Physics, Korea University, 2511, Sejongro, Sejong 339-700, South Korea

2. Department of Control and Instrumentation Engineering, Korea University, 2511, Sejongro, Sejong 339-700, South Korea

3. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5003369

Reference25 articles.

1. Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

3. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

4. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

5. Ferroelectricity in undoped hafnium oxide

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions;Journal of Physics D: Applied Physics;2024-08-29

2. A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate;ACS Applied Electronic Materials;2024-08-02

3. Ferroelectric properties and current mechanisms of BaTiO3/Nb:SrTiO3 thin films;Functional Materials Letters;2024-06-08

4. Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition;Chinese Physics B;2023-10-01

5. Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition;ACS Applied Electronic Materials;2023-09-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3