Importance of collector doping in the design of AlInAs/GaInAs/InP double heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111303
Reference8 articles.
1. 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
2. Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's
3. Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors
4. NpnNdouble‐heterojunction bipolar transistor on InGaAsP/InP
5. High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits;IEEE Transactions on Electron Devices;1998
2. InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition;Applied Physics Letters;1996-02-12
3. A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1−xAs relaxed layers;Journal of Applied Physics;1995-10
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