Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's-Reference-Cited by-同舟云学术

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Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's

Published:1993 Issue:9 Volume:40 Page:1583-1588
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hafizi M.,Stanchina W.E.,Metzger R.A.,Macdonald P.A.,Williams F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/5987/00231562.pdf?arnumber=231562

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical device modelling of emitter–base junction of In0.52Al0.48As/In0.53Ga0.47As-based SHBTs;International Journal of Electronics;2019-05-05

2. Reduction of Turn-on, Knee, and Offset Voltages of InAlGaP/GaAs HBTs Using $\delta$-Doping in the InAlGaP Emitter;IEEE Transactions on Electron Devices;2010-11

3. Temperature studies of InAlAs–InGaAs–InAlAs double heterojunction bipolar transistors with no current blocking;Semiconductor Science and Technology;2010-06-04

4. Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors;Journal of Crystal Growth;2009-05

5. Temperature dependent study of InAlAs–InP∕GaAsSb∕InP double heterojunction bipolar transistors;Applied Physics Letters;2007-06-04

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