Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Performance evaluation of high-power wide band-gap semiconductor rectifiers
2. High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
3. High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
4. Temperature dependence of current-voltage characteristics of npn-type GaN∕InGaN double heterojunction bipolar transistors
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