New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx4/16/15420/00711348.pdf?arnumber=711348
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. VLSI Technology;VLSI Technology;2003-03-19
2. Photonic analog-to-digital conversion by distributed phase modulation;IEEE Photonics Technology Letters;2000-12
3. Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications;Journal of Electronic Materials;2000-02
4. Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design;Microwave and Optical Technology Letters;1999-05-20
5. Undoped-emitter InP/InGaAs HBTs for high-speed and low-power applications;International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
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