Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3446834
Reference14 articles.
1. Band structure and fundamental optical transitions in wurtzite AlN
2. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
3. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)
4. Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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