Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method-Reference-Cited by-同舟云学术

Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method

Published:2024-02-14 Issue:1 Volume:4 Page:
ISSN:2766-0400
Container-title:Science and Technology of Advanced Materials: Methods
language:en
Short-container-title:Science and Technology of Advanced Materials: Methods

Author:

Mori-Tamamura Keito¹,Takahashi Yuchi¹,Sakai Shigeta¹,Morimoto Yuya¹,Hirama Junji¹,Yamaguchi Atsushi A.¹,Kusanagi Susumu²,Kanitani Yuya²,Kudo Yoshihiro²,Tomiya Shigetaka²³

Affiliation:

1. Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, Japan

2. Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, Japan

3. Division of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma-shi, Japan

Funder

SPS Grant-in-Aid for Scientific Research

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/27660400.2024.2315027

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1. Development of InGaN-based red LED grown on (0001) polar surface

2. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

3. 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

4. Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

5. 606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%