633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
Author:
Affiliation:
1. Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
Funder
King Abdullah University of Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5142538
Reference39 articles.
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5. Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
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