Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells-Reference-Cited by-同舟云学术

Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

Published:2023-12-15 Issue:24 Volume:35 Page:1439-1442
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Xing Kun¹^ORCID,Xia Zhihu¹^ORCID,Xie Guangxia¹^ORCID,Pan Zhengwei¹^ORCID,Zhuang Zhe²^ORCID,Hu Junwei¹^ORCID,Sang Yimeng³,Tao Tao³^ORCID,Yang Xiaoping¹,Liu Bin³^ORCID,Zhang Rong³^ORCID

Affiliation:

1. School of Microelectronics, Hefei University of Technology, Hefei, China

2. School of Integrated Circuits, Nanjing University, Suzhou, China

3. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

Funder

National Nature Science Foundation of China

National Nature Science Foundation of Anhui Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/68/10274733/10310018.pdf?arnumber=10310018

Reference36 articles.

1. Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

2. Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact