Red InGaN micro-light-emitting diodes (<b>></b>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact-Reference-Cited by-同舟云学术

Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

Published:2022-03-21 Issue:12 Volume:120 Page:121102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Panpan¹^ORCID,Li Hongjian¹^ORCID,Zhang Haojun¹^ORCID,Yang Yunxuan¹,Wong Matthew S.¹^ORCID,Lynsky Cheyenne¹^ORCID,Iza Mike¹,Gordon Michael J.²^ORCID,Speck James S.¹,Nakamura Shuji¹³^ORCID,DenBaars Steven P.¹³^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Department of Chemical Engineering, University of California, Santa Barbara, California 93106, USA

3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Abstract

We present efficient red InGaN 60 × 60 μm2 micro-light-emitting diodes ( μLEDs) with an epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor deposition using selective area growth. The red TJ μLEDs show a uniform electroluminescence. At a low current density of 1 A/cm2, the emission peak wavelength is 623 nm with a full-width half maximum of 47 nm. The peak external quantum efficiency (EQE) measured in an integrating sphere is as high as 4.5%. These results suggest a significant progress in exploring high efficiency InGaN red μLEDs using TJ technology.

Funder

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0086912

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